Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Self-Heating Effects in SOI Devices and GaN HEMTs

Reliability Concerns due to Self-Heating Effects in GaN HEMTs

Nitride semiconductors have emerged as a strong candidate for high power, high temperature and high frequency applications in the recent years [13]. The motivation for using this material system is clearly illustrated in Figure 1 below. It is important to emphasize that the strongest feature of the III-V materials is the heterostructure technology it can support quantum well, modulation-doped h...

Gate Stability of GaN-Based HEMTs with P-Type Gate

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

Empirical and Physical Modeling of Self-Heating in Power AlGaN/GaN HEMTs

This work shows results of dynamic lumpedelement (LE) thermal modeling of power AlGaN/GaN HEMTs. A realistic 3D structure including top-side metals, GaN-Si thermal boundary resistance, die-attach, and source via hole is modeled using a finite-element (FE) tool, and the results are used to develop simplified LE dynamic thermal models. We show that the LE models can match the FE data with excelle...